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InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE: Journal of Vacuum Science & Technology B: Vol 30, No 2
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a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram
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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide
Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections
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